Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F1001 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
F1001C | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 33 K |
F1002 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
F1003 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
XC2C64-5VQ100I | CoolRunner-II CPLD | distributor | VQFP | 100 | -40°C | 85°C | 95 K |
XC3020A-6PQ100C | Field programmable gate array. | distributor | Plastic PQFP | 100 | 0°C | 85°C | 731 K |
XC3020A-7PQ100C | Field programmable gate array. | distributor | Plastic PQFP | 100 | 0°C | 85°C | 731 K |
XC3020A-7PQ100I | Field programmable gate array. | distributor | Plastic PQFP | 100 | -40°C | 100°C | 731 K |
XC3030A-7PQ100C | Field programmable gate array. | distributor | Plastic PQFP | 100 | 0°C | 85°C | 731 K |
XC3030A-7VQ100C | Field programmable gate array. | distributor | Plastic VQFP | 100 | 0°C | 85°C | 731 K |
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