| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1004 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 37 K |
| F1005 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F1006 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F1007 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| F1008 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| MSK5100-12 | High current, low dropout voltage regulator | distributor | - | 10 | -40°C | 85°C | 320 K |
| MSK5100-12B | High current, low dropout voltage regulator | distributor | - | 10 | -55°C | 125°C | 320 K |
| MSK5100-3.3B | High current, low dropout voltage regulator | distributor | - | 10 | -55°C | 125°C | 320 K |
| MSK5100-5 | High current, low dropout voltage regulator | distributor | - | 10 | -40°C | 85°C | 320 K |
| MSK5100-5B | High current, low dropout voltage regulator | distributor | - | 10 | -55°C | 125°C | 320 K |
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