| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GMS81008 | ROM/RAM size: 8.192/448 bytes, 4MHz, 8-bit single chip microcomputer | distributor | SOP | 28 | -40°C | 85°C | 492 K |
| GMS81008 | ROM/RAM size: 8.192/448 bytes, 4MHz, 8-bit single chip microcomputer | distributor | SDIP | 28 | -40°C | 85°C | 492 K |
| GMS81008 | ROM/RAM size: 8.192/448 bytes, 4MHz, 8-bit single chip microcomputer | distributor | SDIP | 24 | -40°C | 85°C | 492 K |
| GMS81008 | ROM/RAM size: 8.192/448 bytes, 4MHz, 8-bit single chip microcomputer | distributor | PDIP | 20 | -40°C | 85°C | 492 K |
| MRF10005 | 5 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 160 K |
| MRF1000MB | 0.7 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 104 K |
| MRF10031MB | 30 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 163 K |
| MRF1004MB | 4 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 101 K |
| PH1214-100EL | 1200-1400 MHz,100 W, 2 ms pulse,radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 149 K |
| T-1000TNC | 10-1000 MHz, two-way power divider | M-A-COM---manufacturer-of-RF | - | 3 | -55°C | 85°C | 126 K |
| << [588] [589] [590] [591] [592] 593 [594] [595] [596] [597] [598] >> |
|---|
