Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
1.5SMCJ100A | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 100V; Vbr(min/max) = 111/128.0V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 162V, @ Ipp = 9.3A | distributor | - | 2 | -55°C | 150°C | 83 K |
1.5SMCJ100C | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 100V; Vbr(min/max) = 111/141.0V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 179V, @ Ipp = 8.4A | distributor | - | 2 | -55°C | 150°C | 83 K |
1.5SMCJ100CA | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 100V; Vbr(min/max) = 111/128.0V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 162V, @ Ipp = 9.3A | distributor | - | 2 | -55°C | 150°C | 83 K |
3.0SMCJ100A | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It. Ir = 5 uA @ Vrwm. Vc = 162 V @ Ipp = 18.6 A. | distributor | - | 2 | -55°C | 150°C | 83 K |
3.0SMCJ100C | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It. Ir = 5 uA @ Vrwm. Vc = 179 V @ Ipp = 16.6 A. | distributor | - | 2 | -55°C | 150°C | 83 K |
3.0SMCJ100CA | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It. Ir = 5 uA @ Vrwm. Vc = 162 V @ Ipp = 18.6 A. | distributor | - | 2 | -55°C | 150°C | 83 K |
3.0SMCJ100CA | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It. Ir = 5 uA @ Vrwm. Vc = 162 V @ Ipp = 18.6 A. | distributor | - | 2 | -55°C | 150°C | 83 K |
3KP100A | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 100.00 V. Vbr = 111.00 V (min), 128.00 V (max). It = 1 mA. | distributor | - | 2 | -55°C | 175°C | 173 K |
KM4100IC8TR3 | HIGH PERF OP AMP | Fairchild-Semiconductor | - | - | - | - | 333 K |
M28F101-100P1 | Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 100ns Access | SGS-Thomson-Microelectronics | DIL | 32 | - | - | 197 K |
M48Z30-100PM1 | Memory configuration 32Kx8 Memory type Zeropower RAM Memory size 256 K-bit 256K (32K8) ZEROPOWER?CMOS SRAM - 100ns Access Time data retention 10 Yr | SGS-Thomson-Microelectronics | DIL | 28 | - | - | 100 K |
M48Z30-100PM1 | Memory configuration 32Kx8 Memory type Zeropower RAM Memory size 256 K-bit 256K (32K8) ZEROPOWER?CMOS SRAM - 100ns Access Time data retention 10 Yr | SGS-Thomson-Microelectronics | DIL | 28 | - | - | 100 K |
<< [701] [702] [703] [704] [705] 706 [707] [708] [709] [710] [711] >> |
---|