| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK453-100A | PowerMOS transistor, 100V, 14A | Philips-Semiconductors | - | 3 | -55°C | 175°C | 57 K |
| BUK453-100A | PowerMOS transistor, 100V, 14A | Philips-Semiconductors | - | 3 | -55°C | 175°C | 57 K |
| BUK555-100B | PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm | Philips-Semiconductors | - | 3 | -55°C | 175°C | 54 K |
| KM416C1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJ-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJ-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CJL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416C1004CT-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C1004CT-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C1004CTL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
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