| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CD22100E | CMOS 4 x 4 crosspoint switch with control memory high-voltage type (20V rating) | Harris-Semiconductor | PDIP | 16 | -40°C | 85°C | 135 K |
| CD22100F | CMOS 4 x 4 crosspoint switch with control memory high-voltage type (20V rating) | Harris-Semiconductor | CERDIP | 16 | -55°C | 125°C | 135 K |
| KM416C4100CS-5 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 901 K |
| KM416C4100CS-6 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 901 K |
| KM44C4100CK-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44C4100CK-6 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44C4100CKL-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44V4100CK-6 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 340 K |
| KM44V4100CSL-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| KM44V4100CSL-6 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
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