| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK562-100A | 100 V, power MOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | - | - | 59 K |
| BUK563-100A | 100 V, power MOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | - | - | 59 K |
| BUK563-100A | 100 V, power MOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | - | - | 59 K |
| BUK582-100A | 100 V, power MOS transistor logic level FET | Philips-Semiconductors | SOT | 4 | - | - | 55 K |
| BUK582-100A | 100 V, power MOS transistor logic level FET | Philips-Semiconductors | SOT | 4 | - | - | 55 K |
| LLE18100X | NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 60 K |
| LZ1418E100R | NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 66 K |
| PBYR10100B | 100 V, rectifier diode schottky barrier | Philips-Semiconductors | SOT | 3 | - | - | 36 K |
| PBYR30100PT | 100 V, rectifier diode schottky barrier | Philips-Semiconductors | SOT | 3 | - | - | 31 K |
| PHB100N03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 331 K |
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