| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD5207BRU100-REEL7 | 0.3-7V; 2-channel, 256-position digital potentiometer | Analog-Devices | TSSOP | 14 | -40°C | 125°C | 664 K |
| AD5232BRU100-REEL7 | 0.3-7V; 8-bit dual nonvolatile memory digital potentiometer | Analog-Devices | TSSOP | 16 | -40°C | 85°C | 268 K |
| FTS1001 | P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 82 K |
| FTS1003 | P-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 197 K |
| FTS1004 | P-Channel Silicon MOSFET DC-DC Converter Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 101 K |
| ISPLSI3256E-100LB320 | In-system programmable high density PLD, 256 I/O pins, 12000 PLD gates, 512 registers, 100MHz | Lattice-Semiconductor-Corporation | BGA | 320 | 0°C | 70°C | 159 K |
| ISPLSI3256E-100LQ | In-system programmable high density PLD, 256 I/O pins, 12000 PLD gates, 512 registers, 70MHz | Lattice-Semiconductor-Corporation | PQFP | 304 | 0°C | 70°C | 159 K |
| V100ZA3 | Radial lead metal-oxide varistors, 60V | Harris-Semiconductor | - | 2 | -55°C | 85°C | 423 K |
| VQ1000J | 4 N-channel 60-V (D-S) MOSFETs | distributor | DIP | 14 | -55°C | 150°C | 51 K |
| VQ1000P | 4 N-channel 60-V (D-S) MOSFETs | distributor | DIP | 14 | -55°C | 150°C | 51 K |
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