| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK100-50DL | PowerMOS transistor. Logic level TOPFET. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | 85 K |
| BUK100-50GL | PowerMOS transistor. Logic level TOPFET. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | 123 K |
| BUK436W-1000B | PowerMOS transistor. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 69 K |
| BUK436W-1000B | PowerMOS transistor. | Philips-Semiconductors | TO247 | 3 | 0°C | 150°C | 69 K |
| BUK481-100A | PowerMOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 71 K |
| BUK482-100A | PowerMOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 68 K |
| BUK482-100A | PowerMOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 68 K |
| BUK581-100A | PowerMOS transistor. Logic level FET. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 75 K |
| BUK582-100A | PowerMOS transistor. Logic level FET. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 70 K |
| PBYR2100CT | Schottky barrier double diode. Repetitive peak reverse voltage 100 V. | Philips-Semiconductors | SOT223 | 4 | 0°C | 85°C | 55 K |
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