| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1000 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 218 K |
| 2SD1000-T1 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 218 K |
| 2SD1000-T2 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 218 K |
| EQ1-31000 | Motor, Heater and Lamp control for automobile | NEC-Electronics-Inc- | DIMENTIONS | - | - | - | 139 K |
| HYB511000BJ-50 | 1M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 192 K |
| LC361000ARLL-10X | 1 MEG (131072 words x 8 bits) SRAM | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | -20°C | 85°C | 162 K |
| LC361000ARLL-70X | 1 MEG (131072 words x 8 bits) SRAM | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | -20°C | 85°C | 162 K |
| LC361000ATLL-10X | 1 MEG (131072 words x 8 bits) SRAM | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | -20°C | 85°C | 162 K |
| LC361000ATLL-70X | 1 MEG (131072 words x 8 bits) SRAM | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | -20°C | 85°C | 162 K |
| NE321000 | A GaAs HJ-FET chip for ultra low-noise high-gain amplification | NEC-Electronics-Inc- | Chip | - | - | - | 48 K |
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