| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK436W-1000B | PowerMOS transistor. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 69 K |
| BUK436W-1000B | PowerMOS transistor. | Philips-Semiconductors | TO247 | 3 | 0°C | 150°C | 69 K |
| BUK446-1000B | PowerMOS transistor. Drain-source voltage 1000 V. Drain current(DC) 1.5 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 63 K |
| BUK456-1000B | PowerMOS transistor. Drain-source voltage 1000 V. Drain current(DC) 3.1 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | -- |
| CXP971000 | CMOS 16-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 236 K |
| CXP971000 | CMOS 16-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 236 K |
| EMIF04-10006F1 | 4 LINES EMI FILTER AND ESD PROTECTION | SGS-Thomson-Microelectronics | - | - | - | - | 241 K |
| EMIF06-10006F1 | 6 LINES EMI FILTER AND ESD PROTECTION | SGS-Thomson-Microelectronics | - | - | - | - | 235 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
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