| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM1000HA-24H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 49 K |
| CM1000HA-28H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 54 K |
| CM1000HA-28H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 54 K |
| FD1000FH-56 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 41 K |
| FD1000FV-90 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 50 K |
| FD1000FX-90 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 44 K |
| MJ10006 | Switchmode series NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| MJ10007 | Switchmode series NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| MJ10008 | 20A Switchmode series NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 189 K |
| MJ10009 | 20A Switchmode series NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 189 K |
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