Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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D1001UK | 28V, 20W, 1MHz-175MHz single-edded RF | Semelab-Plc- | DA | - | - | - | 43 K |
HN58V1001T-25 | 1M EEPROM (128-kword x 8-bit) ready/busy and RES function | distributor | plastic TSOP | 32 | 0°C | 70°C | 119 K |
IS61VPD10018-166B | 1024K x 18 synchronous pipeline, double-cycle deselect static RAM | distributor | PBGA | 119 | 0°C | 70°C | 166 K |
IS61VPD10018-166BI | 1024K x 18 synchronous pipeline, double-cycle deselect static RAM | distributor | PBGA | 119 | -40°C | 85°C | 166 K |
IS61VPD10018-200B | 1024K x 18 synchronous pipeline, double-cycle deselect static RAM | distributor | PBGA | 119 | 0°C | 70°C | 166 K |
PTF10015 | 50 watts, 300-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20235 | 2 | - | - | 221 K |
PTF10019 | 70 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20237 | 4 | - | - | 322 K |
SML1001R1AN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 60 K |
SML1001R3AN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 60 K |
SML1001RHN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO258 | - | - | - | 18 K |
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