| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| APL1001J | 1000V, 18A power MOS IV transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 37 K |
| APL1001P | 1000V, 18A, power MOS IV transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 115 K |
| APT1001RBLC | 1000V, 11A power MOS VI | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 35 K |
| APT1001RSLC | 1000V, 11A power MOS VI | Advanced-Power-Technology-APT | D3PAK | 3 | -55°C | 150°C | 35 K |
| MGF1001BT | Tape carrier microwave power GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 153 K |
| MJ10012 | 600 V, NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 183 K |
| TDA1001B | Interface and noise suppression circuit for FM receivers | Philips-Semiconductors | DIP | 16 | -30°C | 80°C | 108 K |
| TDA1001B | Interface and noise suppression circuit for FM receivers | Philips-Semiconductors | DIP | 16 | -30°C | 80°C | 108 K |
| TDA1001B | Interface and noise suppression circuit for FM receivers | Philips-Semiconductors | DIP | 16 | -30°C | 80°C | 108 K |
| TDA1001BT | Interface and noise suppression circuit for FM receivers | Philips-Semiconductors | DIP | 16 | -30°C | 80°C | 108 K |
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