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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
APL1001J1000V, 18A power MOS IV transistorAdvanced-Power-Technology-APT-3-55°C150°C37 K
APL1001P1000V, 18A, power MOS IV transistorAdvanced-Power-Technology-APT-3-55°C150°C115 K
APT1001RBLC1000V, 11A power MOS VIAdvanced-Power-Technology-APT-3-55°C150°C35 K
APT1001RSLC1000V, 11A power MOS VIAdvanced-Power-Technology-APTD3PAK3-55°C150°C35 K
MGF1001BTTape carrier microwave power GaAs fetMitsubishi-Electric-Corporation-Semiconductor-Group-3--153 K
MJ10012600 V, NPN silicon power darlington transistordistributor-2-65°C200°C183 K
TDA1001BInterface and noise suppression circuit for FM receiversPhilips-SemiconductorsDIP16-30°C80°C108 K
TDA1001BInterface and noise suppression circuit for FM receiversPhilips-SemiconductorsDIP16-30°C80°C108 K
TDA1001BInterface and noise suppression circuit for FM receiversPhilips-SemiconductorsDIP16-30°C80°C108 K
TDA1001BTInterface and noise suppression circuit for FM receiversPhilips-SemiconductorsDIP16-30°C80°C108 K
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