| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2690-1001 | 1-2 GHz, coaxial limiter | M-A-COM---manufacturer-of-RF | - | 2 | -55°C | 85°C | 195 K |
| F1001 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F1001C | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 33 K |
| GMS77C1001 | EPROM programming/verify specification | distributor | PDIP | 18 | - | - | 271 K |
| GMS77C1001 | EPROM programming/verify specification | distributor | SOIC | 18 | - | - | 271 K |
| GMS77C1001 | EPROM programming/verify specification | distributor | SSOP | 20 | - | - | 271 K |
| MT5C1001DCJ-20L/883C | 1 meg x 4 SRAM memory array | distributor | SOJ | 32 | -55°C | 125°C | 166 K |
| MT5C1001DCJ-25L/883C | 1 meg x 4 SRAM memory array | distributor | SOJ | 32 | -55°C | 125°C | 166 K |
| MT5C1001DCJ-35L/883C | 1 meg x 4 SRAM memory array | distributor | SOJ | 32 | -55°C | 125°C | 166 K |
| RS1001M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 10A at Tc=100degC. | distributor | - | 4 | -55°C | 150°C | 30 K |
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