| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AS1004-1.2D | Micropower voltage reference | distributor | SOIC | 8 | 0°C | 70°C | 48 K |
| AS1004-1.2S | Micropower voltage reference | distributor | - | 3 | 0°C | 70°C | 48 K |
| AS1004-2.5D | Micropower voltage reference | distributor | SOIC | 8 | 0°C | 70°C | 48 K |
| AS1004-2.5S | Micropower voltage reference | distributor | - | 3 | 0°C | 70°C | 48 K |
| F1004 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 37 K |
| HMS81004E | ROM/RAM size: 4K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller | distributor | DIP | 20 | 0°C | 70°C | 1 M |
| MT4C1004J883C | 4 meg x 1 DRAM fast page mode | distributor | ZIP | 20 | -55°C | 125°C | 120 K |
| MT4C1004J883C | 4 meg x 1 DRAM fast page mode | distributor | LCC | 20 | -55°C | 125°C | 120 K |
| MT4C1004J883C | 4 meg x 1 DRAM fast page mode | distributor | Gull wing | 20 | -55°C | 125°C | 120 K |
| MT4C1004J883C | 4 meg x 1 DRAM fast page mode | distributor | DIP | 18 | -55°C | 125°C | 120 K |
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