| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DCR1006SF27 | 2700V phase control thyristor | distributor | - | - | - | - | 114 K |
| DCR1006SF28 | 2800V phase control thyristor | distributor | - | - | - | - | 114 K |
| F1006 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| IRFL1006 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.22 Ohm, ID = 1.6A | International-Rectifier | - | 3 | -55°C | 150°C | 127 K |
| KBPC1006 | 10A single-phase silicon bridge rectifier | distributor | KBPC | 4 | -55°C | 125°C | 370 K |
| MTB10062-HRG | Bi-color LED lamp array. Peak wavelength(nm): 635(HR), 567(G). Emitted color: hi-eff red(HR), green(G). | distributor | - | 20 | -25°C | 85°C | 68 K |
| PTF10065 | 30 watts, 1.93-1.99 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20237 | 3 | - | - | 94 K |
| RS1006M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 10A at Tc=100degC. | distributor | - | 4 | -55°C | 150°C | 30 K |
| ZHCS1006 | Silicon high current schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 160 K |
| ZHCS1006 | Silicon high current schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 160 K |
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