| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GLT6100L08LL-100TS | 100ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
| GLT6100L08LL-55TS | 55ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
| GLT6100L08LL-70TS | 70ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
| GLT6100L08LL-85TS | 85ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
| ISPLSI5512VA-100LB388 | 100 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | BGA | 388 | -55°C | 125°C | 331 K |
| ISPLSI5512VA-100LQ208 | 100 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | PQFP | 208 | -55°C | 125°C | 331 K |
| ISPLSI5512VA-100LQ208 | 100 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | PQFP | 208 | -55°C | 125°C | 331 K |
| NJM2100L | Dual operational amplifier | New-Japan-Radio-Co--Ltd--JRC | SIP | 8 | -40°C | 85°C | 201 K |
| SMV2100L | 2050-2150 MHz VCO (Voltage Controlled Oscillator) | Z-Communications-Inc- | - | - | -30°C | 70°C | 139 K |
| SMV2100L | 2050-2150 MHz VCO (Voltage Controlled Oscillator) | Z-Communications-Inc- | - | - | -30°C | 70°C | 139 K |
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