| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS1100LZ-20 | 3.3V 5-tap economy timing element (delay line), 20ns | Dallas-Semiconductor | SO | 8 | -40°C | 85°C | 156 K |
| ISPLSI3256E-100LB320 | In-system programmable high density PLD, 256 I/O pins, 12000 PLD gates, 512 registers, 100MHz | Lattice-Semiconductor-Corporation | BGA | 320 | 0°C | 70°C | 159 K |
| ISPLSI3256E-100LQ | In-system programmable high density PLD, 256 I/O pins, 12000 PLD gates, 512 registers, 70MHz | Lattice-Semiconductor-Corporation | PQFP | 304 | 0°C | 70°C | 159 K |
| M5M5256CFP-100LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 28 | 0°C | 70°C | 451 K |
| M5M5256CFP-100LX | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 28 | 0°C | 70°C | 451 K |
| M5M5256CKP-100LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 451 K |
| M5M5256CP-100LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 451 K |
| M5M5256CP-100LX | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | 0°C | 70°C | 451 K |
| M5M5256CRV-100LL | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | 0°C | 70°C | 451 K |
| M5M5256CRV-100LX | 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | 0°C | 70°C | 451 K |
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