Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M48T08-100MH1TR | CMOS 8K x 8 timekeeping SRAM, 100ns | SGS-Thomson-Microelectronics | SOH | 28 | 0°C | 70°C | 503 K |
M48T18-100MH1TR | CMOS 8K x 8 timekeeping SRAM, 100ns | SGS-Thomson-Microelectronics | SOH | 28 | 0°C | 70°C | 503 K |
M48Z18-100MH6TR | CMOS 8K x 8 zeropower SRAM, 100ns | SGS-Thomson-Microelectronics | SOH | 28 | -40°C | 85°C | 503 K |
M48Z18-100MH6TR | CMOS 8K x 8 zeropower SRAM, 100ns | SGS-Thomson-Microelectronics | SOH | 28 | -40°C | 85°C | 503 K |
QL8150-7PV100M | Low power FPGA combining performance, density, embedded RAM. | distributor | VQFP | 100 | -55°C | 125°C | 739 K |
QL8150-8PV100M | Low power FPGA combining performance, density, embedded RAM. | distributor | VQFP | 100 | -55°C | 125°C | 739 K |
TB1100M | 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
TB3100M | 275V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
V62C1162048L-100M | Ultra low power 128K x 16 CMOS SRAM | Mosel-Vitelic | BGA | 48 | 0°C | 70°C | 109 K |
V62C1162048LL-100M | Ultra low power 128K x 16 CMOS SRAM | Mosel-Vitelic | BGA | 48 | 0°C | 70°C | 109 K |
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