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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CY37256VP208-100NC3.3V, ISR high-performance CPLDs, 256 macrocells, 100MHzCypress-SemiconductorPQFP2080°C70°C1 M
CY37512P208-100NC5V, ISR high-performance CPLDs, 512 macrocells, 100MHzCypress-SemiconductorPQFP2080°C70°C1 M
CY37512P208-100NI5V, ISR high-performance CPLDs, 512 macrocells, 100MHzCypress-SemiconductorPQFP208-40°C85°C1 M
IC62LV256-100N100ns; 3.3V; 32K x 8 low voltage static RAMdistributorDIP280°C70°C88 K
IS62LV256-100N100ns; 3.3V; 32K x 8 low voltage static RAMdistributorDIP280°C70°C421 K
IXFR100N25250V HiPerFET power MOSFETdistributorISOPLUS2473-55°C150°C81 K
PHB100N03LT25 V, N-channel enhancement mode field-effect transistorPhilips-SemiconductorsSOT3-55°C175°C331 K
PLS100N7 V, programmable logic array (16x48x8)Philips-SemiconductorsDIP280°C75°C71 K
STB100NF03L-03N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----393 K
STB100NF03L-03-1N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----393 K
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