Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AMT8100T46L | 1:25 Gb/s integrated 850 nm MSM-TIA | Anadigics-Inc- | - | 4 | 0°C | 70°C | 457 K |
AS7C33256PFS32A-100TQC | 3.3V 256K x 32 pipeline burst synchronous SRAM, clock speed - 100 MHz | Alliance-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 253 K |
AS7C33256PFS32A-100TQI | 3.3V 256K x 32 pipeline burst synchronous SRAM, clock speed - 100 MHz | Alliance-Semiconductor-Corporation | TQFP | 100 | -40°C | 85°C | 253 K |
AS7C33256PFS36A-100TQC | 3.3V 256K x 36 pipeline burst synchronous SRAM, clock speed - 100 MHz | Alliance-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 253 K |
AS7C33256PFS36A-100TQI | 3.3V 256K x 36 pipeline burst synchronous SRAM, clock speed - 100 MHz | Alliance-Semiconductor-Corporation | TQFP | 100 | -40°C | 85°C | 253 K |
AS7C33256PFS36A-100TQC | 3.3V 256K x 36 pipeline burst synchronous SRAM, clock speed - 100 MHz | Alliance-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 253 K |
GLT6100L08LL-100TS | 100ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
GLT6100L08SL-100TC | 100ns; Ultra low power 64K x 16 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 187 K |
GLT6100L08SL-100TS | 100ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 239 K |
SML100T21 | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | T247CLIP | - | - | - | 19 K |
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