Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
ATF-10100-GP3 | 0.5-12GHz low noise gallium arsenide FET | distributor | - | - | - | - | 51 K |
BR1010 | 1.0A single-phase silicon bridge rectifier | distributor | - | 4 | -55°C | 125°C | 581 K |
CMV1010Y | Micropower RRO operational amplifier | California-Micro-Devices | - | 5 | -40°C | 85°C | 276 K |
D1010UK | 28V, 125W, 1MHz-500MHz push-pull RF | Semelab-Plc- | DR | - | - | - | 50 K |
KBPC1010 | 10A single-phase silicon bridge rectifier | distributor | KBPC | 4 | -55°C | 125°C | 370 K |
MF1010S-1 | Filter for AMPS mobile telephones | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | 6 | -20°C | 75°C | 133 K |
MMBT1010T1 | Low saturation voltage PNP silicon driver transistor | Motorola | - | 3 | -55°C | 150°C | 112 K |
PRC210101/101M | EMI/RFIT-filter | California-Micro-Devices | QSOP | 20 | 0°C | 70°C | 44 K |
PTF10100 | 165 watts, 860-900 MHz LDMOS field effect transistor | Ericsson-Microelectronics | 20250 | 4 | - | - | 163 K |
PTF10107 | 5 watts, 2.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20244 | 3 | - | - | 83 K |
<< [11] [12] [13] [14] [15] 16 [17] [18] [19] [20] [21] >> |
---|