Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
FYP1010DN | SCHOTTKY BARRIER RECTIFIER | Fairchild-Semiconductor | - | - | - | - | 47 K |
FYPF1010DN | SCHOTTKY BARRIER RECTIFIER | Fairchild-Semiconductor | - | - | - | - | 50 K |
PBYR10100B | 100 V, rectifier diode schottky barrier | Philips-Semiconductors | SOT | 3 | - | - | 36 K |
RD38F1010C0ZBL0 | 32-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 70ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
RD38F1010C0ZTL0 | 32-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 70ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
S1010L | Thyristor, 10 amperes, 100 volt | distributor | - | 3 | -20°C | 125°C | 1 M |
SZA1010T | 5.5 V, digital servo driver 3 | Philips-Semiconductors | SO | 20 | -40°C | 85°C | 90 K |
TSMBJ1010C | Bi-directional 100Amp, 100V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
WEDPNF8M721V-1010BI | 100MHz SDRAM/100ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | -40°C | 85°C | 1 M |
WEDPNF8M721V-1010BM | 100MHz SDRAM/100ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | -55°C | 125°C | 1 M |
<< [32] [33] [34] [35] [36] 37 [38] [39] [40] [41] [42] >> |
---|