| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MJ11013 | 30A complementary silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 140 K |
| MXL1013CN8 | Dual precision op amp. | Maxim-Integrated-Producs | Plastic DIP | 8 | 0°C | 70°C | 160 K |
| MXL1013DC/D | Dual precision op amp. | Maxim-Integrated-Producs | Dice | - | 0°C | 70°C | 160 K |
| MXL1013DN8 | Dual precision op amp. | Maxim-Integrated-Producs | Plastic DIP | 8 | 0°C | 70°C | 160 K |
| MXL1013DS8 | Dual precision op amp. | Maxim-Integrated-Producs | SO | 8 | 0°C | 70°C | 160 K |
| MXL1013IN8 | Dual precision op amp. | Maxim-Integrated-Producs | Plastic DIP | 8 | -40°C | 85°C | 160 K |
| MXL1013IS8 | Dual precision op amp. | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 160 K |
| PTF10137 | 12 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20244 | 2 | - | - | 175 K |
| PTF10138 | 60 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20256 | 2 | - | - | 106 K |
| PTF10139 | 60 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20256 | 2 | - | - | 115 K |
| << [11] [12] [13] [14] [15] 16 [17] [18] [19] [20] [21] >> |
|---|
