| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KSA1013 | PNP transistor, for color TV audio output and color TV vertical deflection output | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 55 K |
| LT1013DN8 | Dual precision operational amplifier | Linear-Technology | PDIP | 8 | 0°C | 70°C | 545 K |
| LT1013DS8 | Dual precision operational amplifier | Linear-Technology | SO | 8 | 0°C | 70°C | 545 K |
| LT1013IN8 | Dual precision operational amplifier | Linear-Technology | PDIP | 8 | -40°C | 85°C | 545 K |
| LT1013IN8 | Dual precision operational amplifier | Linear-Technology | PDIP | 8 | -40°C | 85°C | 545 K |
| LT1013MH | Dual precision operational amplifier | Linear-Technology | Metal Can | 8 | -55°C | 125°C | 545 K |
| SZ1013 | 13 V, 1 W, surface mount silicon zener diode | distributor | SMA | 2 | -55°C | 150°C | 28 K |
| VTB1013 | Process photodiode. Isc = 13 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 27 K |
| VTB1013B | Process photodiode. Isc = 1.3 microA, Voc = 420 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 27 K |
| VTE1013 | GaAs infrared emitting diode. Irradiance(typ) 2.7mW/cm2 at distance 36 mm, diameter 6.4 mm. | distributor | - | 2 | -55°C | 125°C | 29 K |
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