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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ispLSI1016EA-125LJ44In-system programmable high density PLD, 125 MHz, 7.5ns, low powerLattice-Semiconductor-CorporationPLCC440°C70°C162 K
ispLSI1016EA-200LJ44In-system programmable high density PLD, 200 MHz, 4.5ns, low powerLattice-Semiconductor-CorporationPLCC440°C70°C162 K
ispLSI1016EA-200LT44In-system programmable high density PLD, 200 MHz, 4.5ns, low powerLattice-Semiconductor-CorporationTQFP440°C70°C162 K
PS11016600V, 30A cib/ci (integrated module) IGBT moduledistributor----408 K
R7S010161000V, 1600A general purpose single diodedistributor----435 K
SC10161.5V voltage regulator implemented in CMOS technologydistributor-30°C70°C166 K
TA20101603DH1000V, 1600A phase control single thyristordistributor----482 K
TSMB1016Rated repetitive off-state voltage:160 ,surface mount thyristor surge protective devicedistributorSMB2-55°C150°C46 K
TYN1016Thyristors, 16A, 1000VSGS-Thomson-Microelectronics-3-40°C125°C92 K
TYN1016RGThyristors, 16A, 1000VSGS-Thomson-Microelectronics-3-40°C125°C92 K
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