| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EN27LV010200J | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. | distributor | PLCC | 32 | 0°C | 70°C | 83 K |
| EN27LV010200P | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. | distributor | PDIP | 32 | 0°C | 70°C | 83 K |
| EN27LV010200T | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. | distributor | TSOP | 32 | 0°C | 70°C | 83 K |
| F1020 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 40 K |
| F1021 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| F1022 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| F1027 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 40 K |
| HMS81020TL | ROM/RAM size: 20K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller | distributor | DIP | 20 | 0°C | 70°C | 1 M |
| HMS81024E | ROM/RAM size: 24K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller | distributor | DIP | 20 | 0°C | 70°C | 1 M |
| OM6102ST | 200V N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 45 K |
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