| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4104C | 500mW low noise silicon zener diode. Nominal zener voltage 10V. 2% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
| KM416V4104CS-45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 808 K |
| KM416V4104CS-50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 808 K |
| KM416V4104CS-60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 808 K |
| KM416V4104CS-L45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 808 K |
| KM416V4104CS-L50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 808 K |
| KM416V4104CS-L60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 808 K |
| KM48V8104CK-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 388 K |
| KM48V8104CKL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 388 K |
| MAX2104CCM | Direct-conversion tuner IC for digital DBS applications | Maxim-Integrated-Producs | TQFP | 48 | 0°C | 70°C | 148 K |
| [1] [2] [3] [4] 5 [6] |
|---|
