Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EN27C01055J | 1Megabit EPROM (128K x 8). Speed 55ns. Single 5V pover supply. | distributor | PLCC | 32 | 0°C | 70°C | 80 K |
EN27C01055JI | 1Megabit EPROM (128K x 8). Speed 55ns. Single 5V pover supply. | distributor | PLCC | 32 | -40°C | 85°C | 80 K |
EN27C01055P | 1Megabit EPROM (128K x 8). Speed 55ns. Single 5V pover supply. | distributor | PDIP | 32 | 0°C | 70°C | 80 K |
EN27C01055PI | 1Megabit EPROM (128K x 8). Speed 55ns. Single 5V pover supply. | distributor | PDIP | 32 | -40°C | 85°C | 80 K |
EN27C01055T | 1Megabit EPROM (128K x 8). Speed 55ns. Single 5V pover supply. | distributor | TSOP | 32 | 0°C | 70°C | 80 K |
F1058 | 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
GMS97L1051 | ROM/RAM size:2 Kb/128 bytes,2.7-3.6 V, 12 MHz, 8-bit microcontroller | distributor | PDIP | 20 | 0°C | 70°C | 254 K |
MSK105B | High power quad operational amplifier | distributor | DIP | 18 | -55°C | 125°C | 326 K |
MSK105E | High power quad operational amplifier | distributor | DIP | 18 | -55°C | 125°C | 326 K |
OM6105SC | 100V N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 45 K |
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