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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
DB105SSingle-phase glass passivated silicon bridge rectifier. MaxVRRM = 600V, maxVRMS = 420V, maxVDC = 600V. Current 1.0A.distributor-4-55°C150°C20 K
EDB105SGlass passivated super fast silicon surface mount bridge rectifier. MaxVRRM = 300V, maxVRMS = 210V, maxVDC = 300V. Current 1.0A.distributor-4-65°C150°C27 K
GMS97C1051ROM/RAM size:2 Kb/128 bytes,4.25-5.5 V, 12 MHz, 8-bit microcontrollerdistributorPDIP200°C70°C254 K
GMS97C1051-24ROM/RAM size:2 Kb/128 bytes,4.25-5.5 V, 24 MHz, 8-bit microcontrollerdistributorPDIP200°C70°C254 K
GMS97C1051-24DROM/RAM size:2 Kb/128 bytes,4.25-5.5 V, 24 MHz, 8-bit microcontrollerdistributorSOP200°C70°C254 K
GMS97C1051-DROM/RAM size:2 Kb/128 bytes,4.25-5.5 V, 12 MHz, 8-bit microcontrollerdistributorSOP200°C70°C254 K
GMS97L1051-DROM/RAM size:2 Kb/128 bytes,2.7-3.6 V, 12 MHz, 8-bit microcontrollerdistributorSOP200°C70°C254 K
MA40105-2769.375 GHz, Stripline packaged schottky mixer diodeM-A-COM---manufacturer-of-RF---65°C150°C--
MA4M1050100 V, MNS microwave chip capacitorM-A-COM---manufacturer-of-RF---55°C200°C40 K
MRF10502500 W, microwave power transistor NPN siliconM-A-COM---manufacturer-of-RF-3--142 K
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