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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SK1065N-channel junction silicon FET, high-frequency general-purpose amp applicationSANYO-Electric-Co--Ltd-20573--107 K
2SK1066N-channel junction silicon FET, high-frequency general-purpose amp applicationSANYO-Electric-Co--Ltd-20583--210 K
2SK1067N-channel MOS silicon FET, FM tuner, VHF-band amp applicationSANYO-Electric-Co--Ltd-20573--109 K
2SK1068N-channel junction silicon FET, impedance conversion applicationSANYO-Electric-Co--Ltd-20583--80 K
2SK1069N-channel junction silicon FET, low-frequency general-purpose amp applicationSANYO-Electric-Co--Ltd-20583--84 K
CXG1068NSP4T Antenna Switch for GSM Dual bandSony-Semiconductor----93 K
DM-106BMagnetoresistance ElementSony-Semiconductor----101 K
INA106KPPrecision Fixed-Gain Differential AmplifierBurr-Brown-Corporation8--40°C85°C175 K
INA106UPrecision Fixed-Gain Differential AmplifierBurr-Brown-Corporation8--40°C85°C175 K
ISO106BLow Cost, High Voltage, Wide Bandwidth Standard Hermetic DIP Signal Isolation Buffer AmplifiersBurr-Brown-Corporation40---230 K
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