| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1065 | 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
| LMX25121065EVAL | Frequency Synthesizer System with Integrated VCO | distributor | evaluation board | - | -40°C | 85°C | 184 K |
| LMX25121065EVAL | Frequency Synthesizer System with Integrated VCO | distributor | evaluation board | - | -40°C | 85°C | 184 K |
| LMX2512LQ1065 | Frequency Synthesizer System with Integrated VCO | distributor | LLP | 28 | -40°C | 85°C | 184 K |
| LMX2512LQX1065 | Frequency Synthesizer System with Integrated VCO | distributor | LLP | 28 | -40°C | 85°C | 184 K |
| LTC1065MJ8 | DC accurate, clock-tunable linear phase 5th order bessel lowpass filter | Linear-Technology | CERDIP | 8 | -55°C | 125°C | 314 K |
| MA1065-1 | High power amplifier for 1.9GHz | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 15 | -20°C | 80°C | 43 K |
| S1065J | Thyristor, 65 amperes, 100 volt | distributor | - | 3 | -40°C | 125°C | 1 M |
| S1065P | Thyristor, 65 amperes, 100 volt | distributor | - | 3 | 0°C | 125°C | 1 M |
| T7S0106504DN | 1000V, 650A phase control single thyristor | distributor | - | - | - | - | 641 K |
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