Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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07106GOA | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 182 K |
15106GOA | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 170 K |
FR106G | 1.0 A fast recovery glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 428 K |
FR106G | Fast recovery glass passivated rectifier. MaxVRRM = 800V, maxVRMS = 560V, maxVDC = 800V. Current 1.0A. | distributor | - | 2 | -65°C | 150°C | 257 K |
MDA106G | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward output current 1.0A at Ta=75degC. | distributor | - | 4 | -55°C | 125°C | 21 K |
RL106G | 1.0A glass passivated rectifier | distributor | - | 2 | -65°C | 175°C | 347 K |
ZVN2106G | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 30 K |
ZVN2106G | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 30 K |
ZVP2106G | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 72 K |
ZVP2106G | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 72 K |
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