| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HER108G | 1000 V, 1 A, high efficiency GPP diode | distributor | - | 2 | - | - | 61 K |
| MMBV2108LT1 | 30 V, silicon tuning diode | distributor | - | 3 | - | - | 61 K |
| SB1080 | 80 V, 10 A, schottky barrier rectifier | distributor | - | 2 | -50°C | 150°C | 146 K |
| SB1080F | 80 V, 10 A, isolation schottky barrier rectifier | distributor | - | 2 | -50°C | 150°C | 149 K |
| SRF1080 | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 80 V. Max average forward rectified current 10.0 A. | distributor | - | 3 | -65°C | 150°C | 170 K |
| TE108R | 800 V, 1 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 132 K |
| TE108R | 800 V, 1 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 132 K |
| TE108RS | 800 V, 1 A, glass passivated junction fast switching rectifier | distributor | - | 2 | -55°C | 150°C | 133 K |
| TS108R | 800 V, 1 A, fast switching plastic diode | distributor | - | 2 | -55°C | 150°C | 164 K |
| TS108RS | 800 V, 1 A, fast switching plastic diode | distributor | - | 2 | -55°C | 150°C | 163 K |
| << [112] [113] [114] [115] [116] 117 [118] [119] [120] [121] [122] >> |
|---|
