Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AT-108RTR | Frequency 0.5-3 GHz, 40dB, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 45 K |
AT-108TR | Frequency 0.5-3 GHz, 40dB, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 45 K |
HH-108BNC | 200 kHz-35 MHz,high-power hybrid lunction | M-A-COM---manufacturer-of-RF | - | 4 | -55°C | 85°C | 94 K |
HH-108SMA | 200 kHz-35 MHz,high-power hybrid lunction | M-A-COM---manufacturer-of-RF | - | 4 | -55°C | 85°C | 94 K |
MA46H200-1088 | 30 V, surface mount GaAs 1.5 hyperabrupt tuning varactor | M-A-COM---manufacturer-of-RF | - | 3 | -65°C | 125°C | 121 K |
MA46H201-1088 | 30 V, surface mount GaAs 1.5 hyperabrupt tuning varactor | M-A-COM---manufacturer-of-RF | - | 3 | -65°C | 125°C | 121 K |
OM6108SC | 500V N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 45 K |
P1087 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 94 K |
SMPP1086 | P-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 94 K |
SMPP1087 | P-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 94 K |
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