| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 15108GOA | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 170 K |
| 15108GOA | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 170 K |
| EDE5108GBSA-4A-E | 512M; DRR-II SDRAM | distributor | BGA | 64 | 0°C | 70°C | 381 K |
| EDE5108GBSA-5A-E | 512M; DRR-II SDRAM | distributor | BGA | 64 | 0°C | 70°C | 381 K |
| HER108G | Glass passivated high efficiency rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 150°C | 157 K |
| HER108G | 1000 V, 1 A, High efficiency glass passivated rectifier | distributor | DO | 2 | -65°C | 150°C | 123 K |
| HER108G | 1000 V, 1 A, high efficiency GPP diode | distributor | - | 2 | - | - | 61 K |
| MDA108G | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward output current 1.0A at Ta=75degC. | distributor | - | 4 | -55°C | 125°C | 21 K |
| UF108G | Ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 1.0 A. | distributor | - | 2 | -55°C | 150°C | 56 K |
| UF108GS | 800 V, 1 A, glass passivated junction ultrafast switching rectifier | distributor | - | 2 | -55°C | 150°C | 160 K |
| [1] 2 [3] |
|---|
