Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AT-109TR | Frequency 0.5-2 GHz, 35dB, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 143 K |
BZA109TS | 9-fold ESD transient voltage suppressor. | Philips-Semiconductors | - | 20 | -65°C | 150°C | 149 K |
BZA109TS | 9-fold ESD transient voltage suppressor. | Philips-Semiconductors | SSOP | 20 | -65°C | 150°C | 149 K |
DR65-0109TR | Single driver for GaAs FET switches and attenuator | M-A-COM---manufacturer-of-RF | SO | 8 | -40°C | 85°C | 213 K |
MBV109T1 | 30 V, silicon epicap diode | distributor | - | 3 | - | - | 146 K |
MMVL109T1 | 30 V, silicon epicap diode | distributor | - | 2 | -55°C | 150°C | 40 K |
SWD-109TR | Single/quad driver for GaAs FET switche and attenuator | M-A-COM---manufacturer-of-RF | SO | 8 | -40°C | 85°C | 317 K |
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