| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 10A1 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 190 K |
| 10A10 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 190 K |
| HTZ110A16K | 16000V high voltage diode rectifier module | distributor | - | 4 | - | - | 205 K |
| HTZ110A19K | 19000V high voltage diode rectifier module | distributor | - | 4 | - | - | 205 K |
| TCH10A15 | 150 V, 10 A, diode | distributor | TO | 3 | -40°C | 150°C | 29 K |
| TCH10A15-11A | 150 V, 10 A, diode | distributor | TO | 3 | -40°C | 150°C | 29 K |
| ZXMN10A11GFTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 1 M |
| ZXMN10A11GFTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 1 M |
| ZXMN10A11GFTC | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 1 M |
| ZXMN10A11GFTC | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 1 M |
| [1] [2] 3 [4] [5] [6] |
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