| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS616UV1610BC | 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16bit | distributor | BGA | 48 | 0°C | 70°C | 217 K |
| BS616UV4010BC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | distributor | COG | 48 | 0°C | 70°C | 218 K |
| BS616UV8010BC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit | distributor | BGA | 48 | 0°C | 70°C | 208 K |
| EDI8L24129V10BC | 10ns; 3.3V power supply; 128K x 24 SRAM | distributor | BGA | 119 | 0°C | 70°C | 143 K |
| UG10BCT | Dual ultrafast soft recovery rectifier, 100V, 10A, 25ns | distributor | - | 3 | -40°C | 150°C | 46 K |
| UGB10BCT | Dual ultrafast soft recovery rectifier, 100V, 10A, 25ns | distributor | - | 3 | -40°C | 150°C | 46 K |
| UGF10BCT | Dual ultrafast soft recovery rectifier, 100V, 10A, 25ns | distributor | - | 3 | -40°C | 150°C | 46 K |
| WED9LC6416V1310BC | SSRAM access 133MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
| WED9LC6416V1610BC | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
| WED9LC6416V2010BC | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | -40°C | 85°C | 370 K |
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