Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
IDT70T631S010BC | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
IDT70T631S010BCI | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 342 K |
IDT70T633S010BCI | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 342 K |
IDT70T651S010BC | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
IDT70T651S010BC | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
IDT70T651S010BCI | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 344 K |
IDT70T659S010BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
IDT70T659S010BCI | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 344 K |
WEDPNF8M721V-1010BC | 100MHz SDRAM/100ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | 0°C | 70°C | 1 M |
WEDPNF8M721V-1210BC | 125MHz SDRAM/100ns flash; 3.3V power supply; 8M x 72 synchronous DRAM + 8Mb flash mixed module multi-chip package | distributor | PBGA | 275 | 0°C | 70°C | 1 M |
[1] [2] [3] [4] 5 [6] |
---|