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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
74LV10DB3.6 V, Triple 3-input NAND gatePhilips-SemiconductorsSSOP14-40°C125°C113 K
74LV10DB3.6 V, Triple 3-input NAND gatePhilips-SemiconductorsSSOP14-40°C125°C113 K
AD7510DIKN25V; DI CMOS protected analog switchesAnalog-DevicesDIP160°C70°C2 M
AD7510DIKP25V; DI CMOS protected analog switchesAnalog-DevicesPLCC200°C70°C2 M
AD7510DIKQ25V; DI CMOS protected analog switchesAnalog-DevicesCERDIP16-25°C85°C2 M
PALC22V10D-7JCFlash erasable, reprogrammable CMOS PAL device, 7nsCypress-SemiconductorPLCC280°C75°C332 K
PALC22V10D-7PCFlash erasable, reprogrammable CMOS PAL device, 7nsCypress-SemiconductorDIP240°C75°C332 K
PALCE22V10-10DMBFlash erasable, reprogrammable CMOS PAL device, 10nsCypress-SemiconductorCERDIP24-55°C125°C384 K
SI4410DY30 V, N-channel enhancement mode field-effect transistorPhilips-SemiconductorsSOT8-55°C150°C266 K
SI9410DY30 V, N-channel enhancement mode field-effect transistorPhilips-SemiconductorsSOT8-55°C150°C266 K
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