| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1EZ110D5 | 1 watt silicon zener diode. Nominal zener voltage 110V at 2.3mA. | distributor | - | 2 | -65°C | 175°C | 109 K |
| 3EZ10D1 | 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-1% tolerance. | distributor | - | 2 | -65°C | 175°C | 146 K |
| 3EZ10D2 | 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-2% tolerance. | distributor | - | 2 | -65°C | 175°C | 146 K |
| 3EZ10D3 | 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-3% tolerance. | distributor | - | 2 | -65°C | 175°C | 146 K |
| 3EZ10D4 | 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-4% tolerance. | distributor | - | 2 | -65°C | 175°C | 146 K |
| FBI10D7M1 | 200 V, 10 A glass passivated bridge rectifier | distributor | Plastic | 4 | -55°C | 150°C | 32 K |
| FS1210DH | 400 V, standard SCR | distributor | - | 3 | -40°C | 125°C | 130 K |
| FS1610DH | 400 V, standard SCR | distributor | - | 3 | -40°C | 125°C | 128 K |
| GP10DI | 200 V, 1 A glass passivated junction rectifier | distributor | - | 2 | -65°C | 175°C | 41 K |
| IDT70T651S10DR | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 10ns | Integrated-Device-Technology-Inc- | PQFP | 208 | 0°C | 70°C | 344 K |
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