| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AS4LC4M16S0-10FTC | 3.3V 4M x 16 CMOS synchronous DRAM | Alliance-Semiconductor-Corporation | TSOPII | 54 | 0°C | 70°C | 566 K |
| AS4LC8M8S0-10FTC | 3.3V 8M x 8 CMOS synchronous DRAM | Alliance-Semiconductor-Corporation | TSOPII | 54 | 0°C | 70°C | 566 K |
| M4A3-192/96-10FAC | 10ns: high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 1 M |
| M4A3-192/96-10FAI | 10ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | -40°C | 85°C | 1 M |
| M4A3-256/128-10FAC | 10ns: high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 1 M |
| M4A3-256/128-10FAI | 10ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | -40°C | 85°C | 1 M |
| M4A3-256/192-10FAC | 10ns: high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 1 M |
| M4A3-384/192-10FAC | 10ns: high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 1 M |
| M4A3-512/192-10FAC | 10ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 1 M |
| M4A3-512/256-10FAC | 10ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | 0°C | 70°C | 1 M |
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