Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRG4RC10KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 190 K |
RGF10KA | 800 V, 1 A surface mount glass passivated junction fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 63 K |
RGF10KA | 800 V, 1 A surface mount glass passivated junction fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 63 K |
RGP10KA | 800 V, 1 A sintered glass passivated junction fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 61 K |
RGP10KA | 800 V, 1 A sintered glass passivated junction fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 61 K |
VN10KN3 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 454 K |
VRE310KD | Low cost precision reference | distributor | DIP | 8 | -40°C | 85°C | 420 K |
VRE310KS | Low cost precision reference | distributor | SM | 8 | -40°C | 85°C | 420 K |
VRE410KD | Precision dual reference | distributor | DIP | 14 | -40°C | 85°C | 404 K |
VRE410KS | Precision dual reference | distributor | SMT | 14 | -40°C | 85°C | 404 K |
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