| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CXK58257AM-10LL | 32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 1uW | Sony-Semiconductor | SOP | 28 | 0°C | 70°C | 291 K |
| CXK58257AP-10LL | 32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 1uW | Sony-Semiconductor | DIP | 28 | 0°C | 70°C | 291 K |
| CXK58257ASP-10LL | 32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 1uW | Sony-Semiconductor | DIP | 28 | 0°C | 70°C | 291 K |
| GAL16V8B-10LJ | High performance E2CMOS PLD generic array logic, 10ns, low power | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 392 K |
| GAL16V8B-10LJI | High performance E2CMOS PLD generic array logic, 10ns, low power | Lattice-Semiconductor-Corporation | PLCC | 20 | -40°C | 85°C | 392 K |
| GAL16V8B-10LP | High performance E2CMOS PLD generic array logic, 10ns, low power | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 392 K |
| GAL16V8B-10LPI | High performance E2CMOS PLD generic array logic, 10ns, low power | Lattice-Semiconductor-Corporation | DIP | 20 | -40°C | 85°C | 392 K |
| GMG316D10LL | 1600 V 3 phase rectifier bridge | distributor | - | - | - | - | 130 K |
| VN0610LL | N-Channel enhancement-mode MOS transistor | Calogic-LLC | - | 3 | -55°C | 150°C | 24 K |
| VN10LM | N-Channel enhancement-mode MOS transistor | Calogic-LLC | TO | 3 | -55°C | 150°C | 24 K |
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