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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M27C4001-10L1TR4 Mbit (512Kb x 8) EPROM, 100nsSGS-Thomson-MicroelectronicsLCCC320°C70°C113 K
M27C4001-10L1X4 Mbit (512Kb x 8) EPROM, 100nsSGS-Thomson-MicroelectronicsLCCC320°C70°C113 K
M27C4001-10L6TR4 Mbit (512Kb x 8) EPROM, 100nsSGS-Thomson-MicroelectronicsLCCC32-40°C85°C113 K
M27C4001-10L6X4 Mbit (512Kb x 8) EPROM, 100nsSGS-Thomson-MicroelectronicsLCCC32-40°C85°C113 K
M5M5256CVP-10LL262144-bit (32768 x 8-bit) CMOS static RAM, 100nsMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP280°C70°C451 K
Q2010LH5Alternistor triac, 10A, 200 Voltdistributor-3-40°C125°C536 K
Q4010LH5Alternistor triac, 10A, 400 Voltdistributor-3-40°C125°C536 K
uPD45128163G5-A10LT-9JF128M-bit (2M x 16-bit x 4-bank), synchronous DRAM LVTTL, 100 MHzdistributorTSOP II54-20°C85°C713 K
uPD45128441G5-A10LT-9JF128M-bit (8M x 4-bit x 4-bank), synchronous DRAM LVTTL, 100 MHzdistributorTSOP II54-20°C85°C713 K
uPD45128841G5-A10LT-9JF128M-bit (4M x 8-bit x 4-bank), synchronous DRAM LVTTL, 100 MHzdistributorTSOP II54-20°C85°C713 K
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