| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO3P | 3 | -55°C | 150°C | 227 K |
| EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO247 | 3 | -55°C | 150°C | 227 K |
| EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. | distributor | TO3 | 3 | -55°C | 150°C | 227 K |
| HSH2510NILO | Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
| TP2510N8 | 100V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
| TP2510ND | 100V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 456 K |
| VN2110ND | 100V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 457 K |
| VN2210N2 | 100V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 44 K |
| VN2210N3 | 100V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 44 K |
| VP2110ND | 100V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 456 K |
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