Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M27C512-10N1 | 512 Kbit (64Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | TSOP | 28 | 0°C | 70°C | 114 K |
M27C512-10N1TR | 512 Kbit (64Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | TSOP | 28 | 0°C | 70°C | 114 K |
M27C512-10N3 | 512 Kbit (64Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | TSOP | 28 | -40°C | 125°C | 114 K |
M27C512-10N3TR | 512 Kbit (64Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | TSOP | 28 | -40°C | 125°C | 114 K |
TMS4256-10NE | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | -40°C | 85°C | 1 M |
TMS4256-10NL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | 0°C | 70°C | 1 M |
TMS4256-10NS | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | -55°C | 100°C | 1 M |
TMS4257-10NE | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | -40°C | 85°C | 1 M |
TMS4257-10NS | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | -55°C | 100°C | 1 M |
TMS4257-10NS | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | -55°C | 100°C | 1 M |
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