| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQP10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 774 K |
| FQP10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 627 K |
| FQP10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 627 K |
| FQP10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 627 K |
| FQPF10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 777 K |
| FQU10N20 | 200 N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 787 K |
| FQU10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 576 K |
| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 217 K |
| HGTG10N120BND | 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 110 K |
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 217 K |
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